Position: Solid State Electronics Laboratory Instructor

 

Revised, designed, tested and documented five solid state laboratory experiments emphasizing the characterization of semiconducting diodes, BJTs and MOSFETS. Supervised student’s experimental procedures and measurements three times a week during 3 hour labs. Trained undergraduate teaching assistants. Responsible for preparing and documenting prelabs, laboratory exercises and written reports. Modified one experiment to demonstrate how model parameters for a forward-biased diode, IRO, IO, n and RS, are extracted experimental measure­ments using mathematical models derived from theory. Revised this experiment to compare and contrast the forward-bias I-V characteristics of the silicon 1N914 and germanium 1N34A diodes. Designed an experiment to extract model parameters, IGO, m CJO and VBR from reverse-biased I-V and C-V measurements for a silicon rectifier, 1N4001 and silicon zener, 1N4733 diodes. Pur­pose of this experiment was to demonstrate how modifications in the doping concentration for pn junctions effect breakdown characteristics and reverse-bias junction capacitance. Created an experiment to compare and contrast non-ideal I-V characteristics of a discrete pnp transistor, 1N3906, biased in the forward and reverse active regions. Non-idea effects such as base width modulation, a finite low frequency small signal output resistance, variations of beta due to low and high currents and the CB and EB breakdown characteristics were investigated. Analyzed I-V characteristics of an enhancement mode n-channel MOSFET in the CA3600E transistor array. This experiment was modified to demonstrate the correct extraction of model parameters such as VT), KP, G/COX’ from the linear and saturation regions. Included the effects of back-biasing on VT, parasitic oxide charges on VTO, channel length modulation and examined the difference between the extracted values of KP from the linear and saturation regions when mobility degrada­tion is present. Also, emphasized the difference between the small-signal low frequency model for a MOSFET biased in the saturation region and BJT biased in the forward active region.